论文信息 - A 1.2 V, Inductorless, Broadband LNA in 90 nm CMOS LP

A 1.2 V, Inductorless, Broadband LNA in 90 nm CMOS LP

This paper presents a novel broadband, inductorless, resistive-feedback CMOS LNA. The LNA is designed for the frequency band 0.4 - 1 GHz. The measured power gain of the LNA is 16 dB at 1 GHz and the 3-dB bandwidth is 2 GHz. A noise figure of 3.5 dB and an IIP3 of -17 dBm are measured at 900 MHz. The S11 is better than -10 dB in the frequency band from 300 MHz up to 1 GHz. The current consumption is 14 mA from a 1.2 V supply. The circuit is designed in a baseline CMOS 90 nm low power (LP) process.

P. Baltus | A. V. van Roermund | M. Sanduleanu | J. van der Tang | M. Vidojkovic

[1] Hossein Hashemi,et al. Concurrent multiband low-noise amplifiers-theory, design, and applications , 2002 .

[2] Eric Hanssen,et al. Fully-integrated DECT/Bluetooth multi-band LNA in 0.18 /spl mu/m CMOS , 2004, 2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512).

[3] A. Bevilacqua,et al. An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers , 2004, IEEE Journal of Solid-State Circuits.

[4] E. Sanchez-Sinencio,et al. A GSM LNA using mutual-coupled degeneration , 2005, IEEE Microwave and Wireless Components Letters.

[5] H.-R. Chuang,et al. A 40~900MHz Broadband CMOS Differential LNA with Gain-Control for DTV RF Tuner , 2005, 2005 IEEE Asian Solid-State Circuits Conference.

[6] S.S. Taylor,et al. A 5GHz resistive-feedback CMOS LNA for low-cost multi-standard applications , 2006, 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.

[7] D. Belot,et al. A Wideband LNA for Wireless Multistandard Receiver in l30nm CMOS SOI Process , 2006, 2006 Ph.D. Research in Microelectronics and Electronics.