Acoustic field mapping on GaAs using microscopic reflectance and reflectance anisotropy

The mapping of surface acoustic wave (SAW) fields by means of microscopic reflectance and reflectance anisotropy in GaAs-based structures is reported. The two techniques are complementary with the second being sensitive to the strain and the first both to the strain and to the surface modulation induced by the SAW. Their combination provides information about both the longitudinal and transverse components of the SAW particle displacement vector.

[1]  Simón.  Coupling of surface acoustic waves to a two-dimensional electron gas. , 1996, Physical review. B, Condensed matter.

[2]  Karl Eberl,et al.  In‐plane optical anisotropy of GaAs/AlAs multiple quantum wells probed by microscopic reflectance difference spectroscopy , 1996 .

[3]  Kircher,et al.  Piezo-optics of GaAs. , 1992, Physical review. B, Condensed matter.

[4]  Hadis Morkoç,et al.  Charge transport by surface acoustic waves in GaAs , 1982 .

[5]  A. Korpel,et al.  Probing of acoustic surface perturbations by coherent light. , 1969, Applied optics.

[6]  H. Fröhlich,et al.  Direct visualization of the oscillation of Au (111) surface atoms , 1996 .

[7]  R. Stoneley,et al.  The propagation of surface elastic waves in a cubic crystal , 1955, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.

[8]  A. Wixforth,et al.  Acoustically Driven Storage of Light in a Quantum Well , 1997 .

[9]  H. Sontag,et al.  Optical Detection of Nanosecond Acoustic Pulses , 1986, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.