论文信息 - Polarization‐independent optical waveguide intensity switch with parabolic quantum well

Polarization‐independent optical waveguide intensity switch with parabolic quantum well

In a parabolic quantum well, the shift in optical transition energy due to the quantum confined Stark effect is independent of the carrier effective mass. This fact enables us to realize polarization‐independent optical waveguide intensity switches with high on/off ratio. An absorption‐type switch with GaAs/Al0.3Ga0.7As equivalent parabolic quantum wells is fabricated with molecular beam epitaxy. Both transverse‐electric and transverse‐magnetic mode lights exhibit an on/off ratio of 27.6 dB at an applied voltage of 6.84 V at 850 nm wavelength. To our knowledge, this is the first polarization‐independent optical waveguide intensity switch based on the electric‐field‐induced effect in the semiconductor quantum well.

[1] S. Hiyamizu,et al. Energy-Band Offset of In0.53Ga0.47As–In0.52(Ga1-xAIx)0.48As Heterostructures, Determined by Photoluminescenee Excitation Spectroscopy of Quasi-Parabolie Quantum Wells Grown by MBE , 1987 .

[2] Hiroaki Inoue,et al. An 8 mm length nonblocking 4×4 optical switch array , 1988, IEEE J. Sel. Areas Commun..

[3] D. A. Kleinman,et al. Parabolic quantum wells with theGaAs−AlxGa1−xAssystem , 1984 .

[4] Kunio Tada,et al. Quantum-Confined Stark Effect in a Parabolic-Potential Quantum Well , 1990 .

[5] S. Chuang,et al. Optical transitions in a parabolic quantum well with an applied electric field—analytical solutions , 1989 .

[6] Yang Qing,et al. Sublevels and excitons in GaAs-AlxGa1-xAs parabolic-quantum-well structures. , 1988 .

[7] V. Arora,et al. Electrical and optical properties of parabolic semiconducting quantum wells , 1986 .

[8] Osamu Mikami,et al. Waveguided optical switch in InGaAs/InP using free-carrier plasma dispersion , 1984 .

[9] A. Gossard,et al. Observation of resonant tunneling through a compositionally graded parabolic quantum well , 1987, 1987 International Electron Devices Meeting.