Design of X-band 6-bit CMOS phase shifter for phased array T/R modules

This article presents the design of a 6-bit phase shifter in a 0.18-μm CMOS technology for X-band phased array radar application. Meandered microstrip lines and compact circuit designs techniques yield a chip with 1.9 mm2 die area. The fabricated phase shifter demonstrates a typical 15.7 ± 1.1 dB insertion loss and a 4° rms phase shift error at 9.5 GHz. To the author's knowledge, this is the first demonstration of a 6-bit phase shifter using CMOS switches with the lowest die area among reciprocal digital phase shifters at X-band. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2404–2406, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24663

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