Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 /spl mu/m
暂无分享,去创建一个
C. Alibert | Y. Rouillard | X. Marcadet | A. Salhi | A. Perona | C. Sirtori | A. Salhi | Y. Rouillard | X. Marcadet | A. Perona | C. Sirtori | M. Garcia | C. Alibert | M. Garcia
[1] K. Sugiyama,et al. 2.0 μm c.w. operation of GaInAsSb/GaSb d.h. lasers at 80 K , 1980 .
[2] R. Martinelli,et al. 2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers , 1999, IEEE Photonics Technology Letters.
[3] Claude Alibert,et al. High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wave lasers emitting near 2.3 /spl mu/m , 2000 .
[4] H.K. Choi,et al. High-power GaInAsSb-AlGaAsSb multiple-quantum-well diode lasers emitting at 1.9 /spl mu/m , 1994, IEEE Photonics Technology Letters.
[5] Martin Walther,et al. Room-temperature low-threshold low-loss continuous-wave operation of 2.26 μm GaInAsSb/AlGaAsSb quantum-well laser diodes , 2000 .
[6] Hao Lee,et al. 4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes , 1997 .