A 113mm2 32Gb 3b/cell NAND flash memory

NAND flash memories are used in digital still cameras, cellular phones, MP3 players and various memory cards. As seen in the growing needs for applications such as solid-state drives and video camcoders, the market demands for larger-capacity storage has continuously increased and NAND Flash memories are enabling a wide range of new applications. In such situations, to achieve larger capacity at low cost per bit, technical improvement in feature-size scaling [1], multi-bit per cell [2,3] and area reduction are essential.

[1]  T.D. Pham,et al.  A 146 mm/sup 2/ 8 Gb NAND flash memory with 70 nm CMOS technology , 2005, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..

[2]  Yan Li,et al.  A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate , 2009, IEEE Journal of Solid-State Circuits.

[3]  N. Shibata,et al.  A 70nm 16Gb 16-level-cell NAND Flash Memory , 2007, 2007 IEEE Symposium on VLSI Circuits.

[4]  K. Kanda.  A 120mm2 16Gb 4 Multi Level NAND Flash Memory with 43nm CMOS Technology , 2008 .

[5]  Jae-Duk Lee,et al.  A New Programming Disturbance Phenomenon in NAND Flash Memory By Source/Drain Hot-Electrons Generated By GIDL Current , 2006, 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop.

[6]  Kamei Teruhiko,et al.  A 146mm2 8Gb NAND Flash Memory with 70nm CMOS Technology , 2005 .

[7]  Yan Li,et al.  A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate , 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.