论文信息 - Effect of losses in an active device and harmonic network on the efficiency of Class F and inverse Class F power amplifiers

Effect of losses in an active device and harmonic network on the efficiency of Class F and inverse Class F power amplifiers

High frequency class F and inverse class F power amplifiers obtain high efficiency of dc to ac power conversion, by reducing the overlap of voltage and current waveforms at the output of the active device, to ensure that the power dissipated in the resistance Ron of the active device is minimised. In this paper the active device is modelled as a switch in series with resistance Ron 0 to 5Ω. For ideal switch voltage / current waveforms and equal dc input power for both amplifiers the efficiency of power conversion is compared. To confirm the predicted results ideal lossless load harmonic networks using lumped elements were designed to meet all frequency conditions of the two amplifiers. These networks were done used in Advanced Design System (ADS) software for Ron=0, 2 and 4 Ω. The predicted efficiency for 2Ω and 4 Ω were 80% and 60% and the obtained simulation efficiency were 83.2% and 65.5% for class F amplifier. For the inverse class F amplifier the predicted efficiency was 87.3% and 74.5% and for the simulation results it was 87.26% and 74.4%. Above predicted and simulated results show that the resistance Ron has less effect on the efficiency of inverse class F than for class F amplifier. As lumped elements can not be used at high frequencies they were replaced initially with lossless transmission lines and then by microstrip lines to also investigate also how copper and dielectric losses affect the efficiency of power conversion.

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