Surface electronic structure of a single-domain Si(111)4 × 1-In surface: a synchrotron radiation photoemission study

The electronic structure of a Si(111)4 × 1-In surface has been studied by angle-resolved photoelectron spectroscopy (ARPES). Using a 1.1° off-axis Si(111) wafer as substrate, a single-domain Si(111)4 × 1-In surface has been prepared in order to determine the dispersion of surface state (SS) without the obscurity arising from multi-oriented 4 × 1 domains. Three SSs that cross the Fermi level have been found. Thus, the Si(111)4 × 1-In surface is concluded to be metallic. The dispersions of the metallic SS appeared to be almost one-dimensional, suggesting one-dimensional metallic bonds among In atoms. Completely occupied SSs have been also found. The characteristics of SSs are discussed in relation to the existing structural models for the Si(111)4 × 1-In surface.

[1]  C. S. Chang,et al.  Surface reconstructions induced by thin overlayers of indium on Si(111) , 1990 .

[2]  J. L. Stevens,et al.  4×1 reconstruction of indium deposited on vicinal Si(111) surfaces , 1993 .

[3]  D. A. Shirley,et al.  High-resolution angle-resolved-photoemission studies of the MB-point surface state on Cu (001) , 1980 .

[4]  A. Kinbara,et al.  Summary Abstract: The work function of In/Si(111) superstructures , 1986 .

[5]  Northrup,et al.  Unoccupied surface states revealing the Si(111) sqrt 3 sqrt 3 -Al, -Ga, and -In adatom geometries. , 1987, Physical review. B, Condensed matter.

[6]  Park,et al.  Indium-induced reconstructions of the Si(111) surface studied by scanning tunneling microscopy. , 1987, Physical review. B, Condensed matter.

[7]  C. Quate,et al.  Behavior of indium on the Si(111)7×7 surface at low‐metal coverage , 1988 .

[8]  J. C. Phillips,et al.  Realistic Tight-Binding Calculations of Surface States of Si and Ge (111) , 1974 .

[9]  M. S. Finney,et al.  An X-ray diffraction study of the Si(111) (√3 × √3) R30°-indium reconstruction , 1993 .

[10]  P. Mårtensson,et al.  Electronic structure of Si(111) surfaces with group III ad-atoms , 1986 .

[11]  S. Louie,et al.  Self-consistent pseudopotential calculations for Si (111) surfaces: Unreconstructed (1×1) and reconstructed (2×1) model structures , 1975 .

[12]  S. Kono,et al.  Structure analysis of the single-domain Si(111)4 × 1-In surface by μ-probe Auger electron diffraction and μ-probe reflection high energy electron diffraction , 1991 .

[13]  G. Margaritondo,et al.  Reconstruction of Aluminum and Indium Overlayers on Si(111) - a Systematic Study with High-Resolution Electron-Energy Loss Spectroscopy and Low-Energy Electron-Diffraction , 1986 .

[14]  A. Kinbara,et al.  Superstructures of submonolayer indium films on silicon (111)7 surfaces , 1979 .

[15]  A. Kinbara,et al.  Isothermal desorption of indium from √31−In and √3−In on silicon (111) surfaces , 1979 .

[16]  M. S. Finney,et al.  The growth of indium on the Si(111) surface studied by X-ray reflectivity and Auger electron spectroscopy , 1992 .

[17]  Shapira,et al.  In overlayers on Si(111)7 x 7: Growth and evolution of the electronic structure. , 1993, Physical review. B, Condensed matter.

[18]  S. Ossicini,et al.  Electronic structure of the (111) ideal and relaxed surface of silicon by the chemical pseudopotential method , 1979 .

[19]  J. Northrup.  Si(111)3×3-Al: An Adatom-Induced Reconstruction , 1984 .