Dielectric–electrode interactions in glass and silicon-compatible thin-film (Ba,Sr)TiO3 capacitors

This paper investigates the role of electrode–dielectric interactions, and barrier materials on leakage current, breakdown voltage, yield and reliability of thinfilm (Ba,Sr)TiO3 capacitors on silicon and glass substrates. The first part of the paper investigates the electrode–dielectric interactions with sputtered Cu and Ni electrodes to identify the mechanisms that lead to high leakage current and low yield. The second part of the paper presents lanthanum nickel oxide as a viable solution to overcome the problems with sputtered Cu and Ni electrodes. A combination of low leakage current, high yield and capacitance densities was achieved with the oxide electrode systems.

[1]  Larry D. Smith,et al.  Power distribution system design methodology and capacitor selection for modern CMOS technology , 1999 .

[2]  R.R. Tummala,et al.  The SOP for miniaturized, mixed-signal computing, communication, and consumer systems of the next decade , 2004, IEEE Transactions on Advanced Packaging.

[3]  Joungho Kim,et al.  Power distribution networks for system-on-package: status and challenges , 2004, IEEE Transactions on Advanced Packaging.

[4]  Junichi Koike,et al.  Self-forming diffusion barrier layer in Cu–Mn alloy metallization , 2005 .

[5]  T. Lebey,et al.  Structure–properties correlations for barium titanate thin films obtained by rf-sputtering , 2007 .

[6]  Yuki Miwa,et al.  Orientation control and electrical properties of PZT/LNO capacitor through chemical solution deposition , 2006 .

[7]  V. Sukumaran,et al.  Low-Cost Thin Glass Interposers as a Superior Alternative to Silicon and Organic Interposers for Packaging of 3-D ICs , 2012, IEEE Transactions on Components, Packaging and Manufacturing Technology.

[8]  Robert P. H. Chang,et al.  Materials science and integration bases for fabrication of (BaxSr1−x)TiO3 thin film capacitors with layered Cu-based electrodes , 2003 .

[9]  F. Doğan,et al.  Chemical and microstructural characterization of rf-sputtered BaTiO3 nano-capacitors with Ni electrodes , 2012 .

[10]  Xuwen Liu,et al.  Electronic Components and Technology Conference (ECTC), San Diego CA, 26-29 May 2015 , 2015 .

[11]  Ching-Liang Dai,et al.  Thermal effects in PZT: diffusion of titanium and recrystallization of platinum , 2004 .

[12]  J. Sarradin,et al.  Copper diffusion into silicon substrates through TaN and Ta/TaN multilayer barriers , 2006 .

[13]  S. Nahm,et al.  Electrical Properties of Amorphous BaTi4O9 Films Grown on Cu/Ti/SiO2/Si Substrates Using RF Magnetron Sputtering , 2013 .

[14]  J. Speck,et al.  Realization of high tunability barium strontium titanate thin films by rf magnetron sputtering , 1999 .

[15]  Karen Holloway,et al.  Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions , 1992 .