A study on the photoresponse of three-dimensional reduced graphene oxide foams based field effect transistors

Graphene is a new type of two-dimensional (2D) nanomaterial composed of single-layer carbon atoms. It has high carrier mobility, good optical performance, good mechanical performance and thermal conductivity. Three-dimensional (3D) reduce graphene oxide (rGO) foam integrates the structure of 2D graphene with three-dimensional network connected structure of carbon nanomaterials, which is in a seamless connection possessing better optical and electrical properties. 3D GF has achieved some results in solar cells and supercapacitors, however, field effect transistors are rarely studied. In this paper, a kind of field effect transistor (FET) based on 3D rGO foam has been fabricated and its photoelectric response characteristics have been studied. The results show that an obvious photocurrent could be measured when the laser irradiate on the 3D rGO foams channel. The magnitude of the photocurrent can be effectively modulated by the back-gate voltage. The device exhibits a “V” shape transfer curves and stabile and reproducible photocurrent cycles. Particularly, a high photoresponsivity of 7.8 mA W-1 is achieved, which reveals 3D rGO foams a good candidate for photodetectors.