Parameter Extraction Scheme For Silicon PressureSensors In Standard CMOS Technology

Forming a part of the CAD/CAE attempts to simulate and design microsystems, the process of parameter extraction for a pressure sensor macromodel from layout is presented. The pressure sensor was integrated on a silicon chip by means of a standard CMOS technology (1.0 urn from Atmel-European Silicon Structures) followed by micromechanical structuring of the device. A tool for analysing the physical layout of the sensor is also described. From the results, an electrical model of the sensor was obtained for use in conventional CAD tools.