Design of SiGe HBT UWB low noise amplifier employing broadband noise canceling

A SiGe HBT low-noise amplifier (LNA) for UWB application is presented. According to the analysis for noise of common base transistor, noise canceling structure for SiGe HBT is proposed to reduce the noise arising from common transistor, thus reduce the noise of LNA. Meanwhile it also compensate the gain of the LNA, thus improves the gain flatness. The chip layout has been designed, its area is 0.56×0.53 mm2. The simulation results of the LNA demonstrate that in the range of UWB, the noise figure is reduced 2 dB compared with the case without noise canceling, the gain is 16.4∼17.4, gain flatness is ±0.5dB, linearity is •6dBm.

[1]  Shen-Iuan Liu,et al.  A Broadband Noise-Canceling CMOS LNA for 3.1–10.6-GHz UWB Receivers , 2007, IEEE Journal of Solid-State Circuits.

[2]  Jongsoo Lee,et al.  Analysis and design of an ultra-wideband low-noise amplifier using resistive feedback in SiGe HBT technology , 2006, IEEE Transactions on Microwave Theory and Techniques.

[3]  Mohammad Yavari,et al.  A noise-canceling CMOS LNA design for the upper band of UWB DS-CDMA receivers , 2009, 2009 IEEE International Symposium on Circuits and Systems.

[4]  Shen-Iuan Liu,et al.  A broadband noise-canceling CMOS LNA for 3.1-10.6-GHz UWB receiver , 2005, Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005..