论文信息 - UV-Specific (320-365 nm) Digital Camera Based On a 128×128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes

UV-Specific (320-365 nm) Digital Camera Based On a 128×128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes

An ultraviolet-specific (320-365 nm) digital camera based on a 128×128 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully developed. The diode structure consists of a base n-type layer of AlGaN (~23% Al) followed by undoped and then p-type GaN layers deposited by metal organic vapor phase epitaxy. Double-side polished sapphire wafers serve as transparent substrates. Standard photolithographic, etching, and metallization procedures were employed to fabricate the devices. The fully-processed photodiode array was hybridized to a silicon readout integrated circuit (ROIC) using In bump bonds for electrical contact. The UV camera was operated at room temperature at frame rates ranging from 15 to 240 Hz. A variety of UV scenes were successfully recorded with this configuration.

[1] Andrew G. Glen,et al. APPL , 2001 .

[2] J. F. Schetzina,et al. Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC , 1997 .

[3] Shuji Nakamura,et al. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours , 1997 .

[4] A. La,et al. Development of 256x256 GaN ultraviolet imaging arrays , 1999, Optics & Photonics.

[5] Holly A. Marsh,et al. Back-illuminated GaN/AlGaN heterojunction photodiodes with high quantum efficiency and low noise , 1998 .

[6] Fernando Ponce,et al. Defects and Interfaces in GaN Epitaxy , 1997 .

[7] Shuji Nakamura,et al. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes , 1995 .

[8] Shuji Nakamura,et al. The Blue Laser Diode: GaN based Light Emitters and Lasers , 1997 .

[9] J. F. Schetzina,et al. Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes , 1999 .

[10] Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD , 1997 .

[11] H. Amano,et al. Shortest wavelength semiconductor laser diode , 1996 .

[12] Masahiko Sano,et al. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices , 1997 .

[13] S. Nakamura,et al. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes , 1994 .