NBTI: An Atomic-Scale Defect Perspective

We utilize a combination of MOSFET-gate controlled diode DC-IV measurements and a very sensitive electrically-detected electron spin resonance technique called spin-dependent recombination to observe and identify defect centers generated during NBTI in fully processed SiO<sub>2</sub> and plasma nitrided oxide (PNO)-based pMOSFETs. In SiO <sub>2</sub> devices, we observe the NBTI-induced generation of two Si/SiO<sub>2</sub> interface silicon dangling bond centers (P<sub>b0 </sub> and P<sub>b1</sub>) and very likely an oxide silicon dangling bond center (E'). Our observations indicate that both P<sub>b0</sub> and P<sub>b1</sub> defects play major roles in these SiO<sub>2</sub>-based devices and also suggest that E' centers could play an important role. In PNO devices, we observed the NBTI-induced generation of a new defect center which is fundamentally different from the P<sub>b0</sub>/P<sub>b1 </sub> defects generated during NBTI in SiO<sub>2</sub> devices. Our results indicate that it plays a dominating role in NBTI-induced interface state generation in thin PNO devices and also exhibits a post-negative bias temperature stress (NBTS) recovery. Although we observe different interface state defects, we observed essentially equivalent activation energies in both the SiO<sub>2</sub> and PNO devices

[1]  Patrick M. Lenahan,et al.  Spin dependent recombination at the silicon/silicon dioxide interface , 1990 .

[2]  I. Solomon,et al.  Explanation of the large spin-dependent recombination effect in semiconductors , 1978 .

[3]  Akitaka Yoshigoe,et al.  Characterization of interface defects related to negative-bias temperature instability in ultrathin plasma-nitrided SiON/Si<1 0 0> systems , 2005, Microelectron. Reliab..

[4]  J. Kavalieros,et al.  Direct-current measurements of oxide and interface traps on oxidized silicon , 1995 .

[5]  F. Nouri,et al.  On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory, and implications , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

[6]  D. Schroder,et al.  Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing , 2003 .

[7]  D. Griscom Characterization of three E'-center variants in X- and γ-irradiated high purity a-SiO2 , 1984 .

[8]  Muhammad Ashraful Alam,et al.  A comprehensive model of PMOS NBTI degradation , 2005, Microelectron. Reliab..

[9]  W. Walukiewicz,et al.  Surface Recombination in Semiconductors , 1995 .

[10]  Miss A.O. Penney (b) , 1974, The New Yale Book of Quotations.

[11]  J. F. Conley,et al.  Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO2 , 1995 .

[12]  Shinji Fujieda,et al.  Nitridation effects on Pb center structures at SiO2/Si(100) interfaces , 2004 .

[13]  D. Lepine,et al.  Spin-Dependent Recombination on Silicon Surface , 1972 .

[14]  P. Lenahan,et al.  A spin-dependent recombination study of radiation-induced P/sub b1/ centers at the [001] Si/SiO/sub 2/ interface , 2000 .

[15]  Lap Chan,et al.  Negative-bias-temperature-instability (NBTI) for p/sup +/-gate pMOSFET with ultra-thin plasma-nitrided gate dielectrics , 2002, 7th International Symposium on Plasma- and Process-Induced Damage.

[16]  Shashi P. Karna,et al.  Microscopic structure of the E'/sub /spl delta// center in amorphous SiO/sub 2/: A first principles quantum mechanical investigation , 1997 .

[17]  N. Johnson,et al.  Interface traps and Pb centers in oxidized (100) silicon wafers , 1986 .

[18]  D. Biegelsen,et al.  Electronic traps and Pb centers at the Si/SiO2 interface: Band‐gap energy distribution , 1984 .

[19]  John F. Conley,et al.  Observation and electronic characterization of ‘‘new’’ E′ center defects in technologically relevant thermal SiO2 on Si: An additional complexity in oxide charge trapping , 1994 .

[20]  P. Dressendorfer,et al.  Effect of bias on radiation‐induced paramagnetic defects at the silicon‐silicon dioxide interface , 1982 .

[21]  Patrick M. Lenahan,et al.  A spin dependent recombination study of radiation induced defects at and near the Si/SiO/sub 2/ interface , 1989 .

[22]  M.A. Alam,et al.  Hole energy dependent interface trap generation in MOSFET Si/SiO/sub 2/ interface , 2005, IEEE Electron Device Letters.

[23]  J. F. Conley,et al.  What can electron paramagnetic resonance tell us about the Si/SiO2 system? , 1998 .

[24]  Patrick M. Lenahan,et al.  High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs: 29 Si hyperfine spectra , 1993 .

[25]  Srikanth Krishnan,et al.  Impact of negative bias temperature instability on digital circuit reliability , 2005, Microelectron. Reliab..

[26]  S. Fujieda,et al.  Hydrogen redistribution induced by negative-bias-temperature stress in metal–oxide–silicon diodes , 2002 .

[27]  John B. Shoven,et al.  I , Edinburgh Medical and Surgical Journal.

[28]  V. Reddy,et al.  A comprehensive framework for predictive modeling of negative bias temperature instability , 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

[29]  Koichi Ando,et al.  Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems , 2003 .

[30]  Patrick M. Lenahan,et al.  Density of states of Pb1 Si/SiO2 interface trap centers , 2002 .

[31]  T. P. Chen,et al.  Relationship between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias-temperature stress condition , 2003 .

[32]  Friebele,et al.  Fundamental radiation-induced defect centers in synthetic fused silicas: Atomic chlorine, delocalized E' centers, and a triplet state. , 1986, Physical review. B, Condensed matter.

[33]  V. Afanas’ev,et al.  P b 1 interface defect in thermal ( 100 ) S i / S i O 2 : 29 Si hyperfine interaction , 1998 .

[34]  S. John,et al.  NBTI impact on transistor and circuit: models, mechanisms and scaling effects [MOSFETs] , 2003, IEEE International Electron Devices Meeting 2003.

[35]  J. Babcock,et al.  Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors , 2003 .

[36]  Patrick M. Lenahan,et al.  Hole traps and trivalent silicon centers in metal/oxide/silicon devices , 1984 .

[37]  N. Mielke,et al.  Universal recovery behavior of negative bias temperature instability [PMOSFETs] , 2003, IEEE International Electron Devices Meeting 2003.