Ozone Sensing Properties of Polycrystalline Indium Oxide Films at Room Temperature

The room temperature ozone sensing properties of polycrystalline indium oxide (InO x ) thin films have been investigated. Films with thicknesses of 10 to 1100 nm were sputtered in a dc-magnetron system onto Corning 7059 glass at various substrate temperatures and sputtering atmospheres. Initially, as-grown films were brought to a high conducting state through a photoreduction process by UV light exposure and subsequently they were exposed to a controlled ozone atmosphere. By this treatment the sensitivity of the films could be monitored. The films exhibit resistivity changes of more than five orders of magnitude. The sensitivity was studied for different ozone concentrations and at different temperatures. The response of the films increased linearly with the ozone concentration and the highest sensitivity was achieved when the measurements were carried out at room temperature. Best results were achieved with very thin InO x films (<100 nm) deposited at room temperature in a pure oxygen atmosphere.

[1]  H. Fritzsche,et al.  Transport near the mobility edge, the sign of the hall effect, photoreduction and oxidation of amorphous InOχ , 1993 .

[2]  Norio Miura,et al.  PREPARATION OF INDIUM OXIDE THIN FILM BY SPIN-COATING METHOD AND ITS GAS-SENSING PROPERTIES , 1998 .

[3]  Theodore I. Kamins,et al.  Hall Mobility in Chemically Deposited Polycrystalline Silicon , 1971 .

[4]  David E. Williams Semiconducting oxides as gas-sensitive resistors , 1999 .

[5]  K. G. Gopchandran,et al.  The preparation of transparent electrically conducting indium oxide films by reactive vacuum evaporation , 1997 .

[6]  J. Bardeen,et al.  Deformation Potentials and Mobilities in Non-Polar Crystals , 1950 .

[7]  High-rate reactive deposition of indium oxide films on unheated substrate using ozone gas , 1999 .

[8]  H. Fritzsche,et al.  Photoreduction and oxidation of as‐deposited microcrystalline indium oxide , 1996 .

[9]  N. Lakshminarayan,et al.  Optical and electrical investigations of indium oxide thin films prepared by thermal oxidation of indium thin films , 1996 .

[10]  S. Naseem,et al.  Effects of oxygen partial pressure on the properties of reactively evaporated thin films of indium oxide , 1988 .

[11]  C. Granqvist Transparent conductive electrodes for electrochromic devices: A review , 1993 .

[12]  G. Kiriakidis,et al.  Structural and chemical characterization of as-deposited microcrystalline indium oxide films prepared by dc reactive magnetron sputtering , 1999 .

[13]  M. Ritala,et al.  Modifying ALE grown In2O3 films by benzoyl fluoride pulses , 1997 .

[14]  G. Kiriakidis,et al.  Permanent holographic recording in indium oxide thin films using 193 nm excimer laser radiation , 1999 .

[15]  U. Weimar,et al.  Sol-gel prepared In 2O 3 thin films , 1997 .

[16]  Shahzad Naseem,et al.  Optoelectrical and structural properties of evaporated indium oxide thin films , 1993 .

[17]  Victor F. Weisskopf,et al.  Theory of Impurity Scattering in Semiconductors , 1950 .

[18]  C. Wickersham,et al.  The effect of substrate bias on the electrical and optical properties of In2O3 films grown by RF sputtering , 1978 .

[19]  Yuka Yamada,et al.  Stoichiometric indium oxide thin films prepared by pulsed laser deposition in pure inert background gas , 2000 .