1.21 µm Continuous-Wave Operation of Highly Strained GaInAs Quantum Well Lasers on GaAs Substrates

Highly strained GaInAs quantum well lasers emitting at 1.21 µm are fabricated on GaAs substrates. Room-temperature continuous-wave operation with a low threshold current density of 360 A/cm2 is achieved. 1.3 µm GaInNAs/GaAs lasers can be fabricated at a low nitrogen content of 0.5%.