New SiC JFET Boost Performance of Solar Inverters

The article proposes a new normally-on Silicon Carbide (SiC) JFET device concept with monolithically integrated body diode. The new device combines ultra fast switching with ohmic forward characteristic and a zero reverse recovery characteristic of its body diode. It allows a significant boost of the performance of solar inverters especially in the light of new requirements such as reactive power capability and fault ride through. Best device performance is achieved with a direct driven approach, compatible with safety aspects in voltage driven topologies which is implemented in combination with a low voltage MOSFET. Gerald Deboy, Roland Rupp, Infineon Technologies Austria/Germany, and Regine Mallwitz, Holger Ludwig, SMA Solar Technology, Germany