Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates

The authors present a comparison of metal organic chemical vapor deposition grown compositionally graded metamorphic buffers, which enable virtual substrates with very high quality crystal lattices with lattice constants from 5.45 to 5.65 A (threading dislocation density, ρt, around 104 cm−2). The structures, grown on GaP or GaAs, consist of graded In-fraction InGaP and AlInGaP or graded P-fraction GaAsP. They show that surface roughness and locally strained regions of phase separation (branch defects) limit misfit dislocation glide velocity and escalate threading dislocation density. High surface roughness and branch defects in (Al)InGaP lead to the lowest quality virtual substrates we observed, with ρt of around 3×106 cm−2. In contrast, graded mixed-anion films of GaAsP avoid branch defects and minimize surface roughness, giving superior defect densities, as low as 104 cm−2 at useful lattice constants halfway between that of Si and Ge. Tensile graded GaAs1−zPz layers yield the smoothest films (0.78 nm r...

[1]  Eugene A. Fitzgerald,et al.  Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation , 2007 .

[2]  E. Fitzgerald,et al.  Alternative slip system activation in lattice-mismatched InP/InGaAs interfaces , 2007 .

[3]  E. Fitzgerald,et al.  Microstructural defects in metalorganic vapor phase epitaxy of relaxed, graded InGaP: Branch defect origins and engineering , 2004 .

[4]  M. Hudait,et al.  High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy , 2003 .

[5]  Andrew Y. Kim,et al.  Engineering high-quality InxGa1-xP graded composition buffers on GaP for transparent substrate light-emitting diodes , 1999, Photonics West.

[6]  C. Tu,et al.  Highly strained InxGa1−xPGaP quantum wells grown on GaP and on an Inx2Ga1−x2P buffer layer by gas-source molecular beam epitaxy , 1996 .

[7]  R. Masut,et al.  Transmission electron microscopy and cathodoluminescence of tensile‐strained GaxIn1−xP/InP heterostructures. II. On the origin of luminescence heterogeneities in tensile stress relaxed GaxIn1−xP/InP heterostructures , 1996 .

[8]  R. Masut,et al.  Transmission electron microscopy and cathodoluminescence of tensile‐strained GaxIn1−xP/InP heterostructures. I. Spatial variations of the tensile stress relaxation , 1996 .

[9]  Toshiaki Tanaka,et al.  Lasing operation up to 200 K in the wavelength range of 570–590 nm by GaInP/AlGaInP double‐heterostructure laser diodes on GaAsP substrates , 1995 .

[10]  Meng-Chyi Wu,et al.  AlGaInP/GaInP double-heterostructure orange light-emitting diodes on GaAsP substrates prepared by metalorganic vapor-phase epitaxy , 1994 .

[11]  M. Jou,et al.  Metalorganic Vapor Phase Epitaxy Growth and Characterization of (AlxGa1-x)0.5In0.5P/Ga0.5In0.5P (x=0.4, 0.7 and 1.0) Quantum Wells on 15°-Off-(100) GaAs Substrates at High Growth Rate , 1993 .

[12]  Fang,et al.  Extended x-ray-absorption fine-structure study of GaAsxP1-x semiconducting random solid solutions. , 1993, Physical review. B, Condensed matter.

[13]  K. Kavanagh,et al.  Gas-source molecular beam epitaxial growth, characterization, and light-emitting diode application of InxGa1-xP on GaP(100) , 1993 .

[14]  G. B. Stringfellow,et al.  Strained-layer superlattices for reduction of dislocation density in GaAs1−xPx on GaAs by organometallic vapor-phase epitaxy , 1989 .

[15]  M. S. Abrahams,et al.  Dislocations in vapor‐grown compositionally graded (In,Ga)P , 1975 .

[16]  G. B. Stringfellow.  Calculation of ternary and quaternary III–V phase diagrams , 1974 .

[17]  L. R. Weisberg,et al.  Stresses in Heteroepitaxial Layers: GaAs1−xPx on GaAs , 1969 .

[18]  L. R. Weisberg,et al.  Dislocation morphology in graded heterojunctions: GaAs1−xPx , 1969 .