Pad effects on material-removal rate in chemical-mechanical planarization
暂无分享,去创建一个
Yongjin Guo | Bo Yan | Abhijit Chandra | Ashraf F. Bastawros | A. Chandra | Yongjin Guo | A. Bastawros | B. Yan
[1] W. Tseng,et al. A Comparative Study on the Roles of Velocity in the Material Removal Rate during Chemical Mechanical Polishing , 1999 .
[2] David Dornfeld,et al. Material removal mechanism in chemical mechanical polishing: theory and modeling , 2001 .
[3] Hilary Bart-Smith,et al. Experimental analysis of deformation mechanisms in a closed-cell aluminum alloy foam , 2000 .
[4] R. Komanduri,et al. On the Chemo-Mechanical Polishing (CMP) of Si3N4 Bearing Balls With Water Based CeO2 Slurry , 1998 .
[5] B. Roberts,et al. Chemical-mechanical planarization , 1992, IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop - ASMC '92 Proceedings.
[6] Abhijit Chandra,et al. A plasticity-based model of material removal in chemical-mechanical polishing (CMP) , 2001 .
[7] Pierre H. Woerlee,et al. Influence of Overpolish Time on the Performance of W Damascene Technology , 1998 .
[8] Ronald J. Gutmann,et al. Chemical Mechanical Planarization of Microelectronic Materials , 1997 .
[9] T. Cale,et al. Von Mises Stress in Chemical‐Mechanical Polishing Processes , 1997 .