Polycrystalline ZnO Mott-barrier diodes

This study reports the fabrication of polycrystalline ZnO Mott-barrier diodes at room temperature by sputtering deposition. Fundamental and systematic analyses of the diodes were conducted using current-voltage (I-V), capacitance-voltage (C-V), pulse-response, varying-temperature measurements, and reliability tests. The proposed diodes had a high rectifying ratio of 4.7 × 104 at ± 1.2 V, a fast switching speed of <50 ns, and stable rectification under a ±2 V pulse stress up to 1010 cycles. These results demonstrate polycrystalline ZnO Mott-barrier diodes' potential for future applications.

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