Characteristics of TiO 2 Thin Films Fabricated by R.E, Magnetron Sputtering

Titanium oxide thin films were prepared on Si(100) substrates by R.F. magnetron reactive sputtering at R.F power range, and annealed at for 1 hour. The properties of thin films were analyzed using x-ray, , ellipsometer, scanning electron microscopy, and FT-IR spectrometer. Upon in-situ depositions, the initial phase of thin film showed non-crystalline phase at R.F. power watt. The crosssection of thin films were sbserved to be the columnar structure. With the increasing R.F power and annealing temperature, the grain size, crystallinity, refractive index, and void size of titanium oxides showed a tended to increase. The FT-IR transmittance spectra of titanium oxide thin films have the obsorption band of Ti-O bond, Si-O bond, Si-O-Ti bond and O-H bond. With the increase of R.F. power and annealing temperature, these films have the stronger bond structures. It is considered that such a phenomena is due to phase transition and good crystallinity

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