Submillimeter-wave InP Gunn devices

Recent advances in design and technology significantly improved the performance of low-noise InP Gunn devices in oscillators first at D-band (110-170 GHz) and then at W-band (75-110 GHz) frequencies. More importantly, they next resulted in orders of magnitude higher RF output power levels above D-band and operation in a second-harmonic mode up to at least 325 GHz. Examples of the state-of-the-art performance are continuous-wave RF power levels of more than 30 mW at 193 GHz, more than 3.5 mW at 300 GHz, and more than 2 mW at 315 GHz. The dc power requirements of these oscillators compare favorably with those of RF sources driving frequency multiplier chains to reach the same output RF power levels and frequencies. Two different types of doping profiles, a graded profile and one with a doping notch at the cathode, are prime candidates for operation at submillimeter-wave frequencies. Generation of significant RF power levels from InP Gunn devices with these optimized doping profiles is predicted up to at least 500 GHz and the performance predictions for the two different types of doping profiles are compared.

[2]  Tadao Ishibashi,et al.  C.W. oscillation with p+-p-n+ silicon IMPATT diodes in 200 GHz and 300 GHz bands , 1976 .

[3]  Simon Verghese,et al.  Highly tunable fiber-coupled photomixers with coherent terahertz output power , 1997 .

[4]  Lothar Wandinger,et al.  mm-wave InP Gunn devices - Status and trends , 1981 .

[5]  Heribert Eisele,et al.  Active Two-Terminal Devices for Terahertz Power Generation by Multiplication , 2001 .

[6]  Heribert Eisele,et al.  D-band (110–170 GHz) InP gunn devices , 1993 .

[7]  Antti V. Räisänen,et al.  Frequency multipliers for millimeter and submillimeter wavelengths , 1992, Proc. IEEE.

[8]  S. Hersee,et al.  High-power high-efficiency LP-MOCVD InP Gunn diodes for 94 GHz , 1984 .

[9]  P. Siegel.  Terahertz Technology , 2001 .

[10]  A. Rydberg.  A contribution to the design of wideband tunable second harmonic mode millimeter-wave InP-TED oscillators above 110 GHz , 1990 .

[11]  R. Kamoua,et al.  Monte Carlo-based harmonic-balance technique for the simulation of high-frequency TED oscillators , 1998 .

[12]  Heribert Eisele.  High performance InP Gunn devices with 34 mW at 193 GHz , 2002 .

[13]  Heribert Eisele,et al.  Two-terminal active devices for terahertz sources , 2003 .

[14]  J. E. Carlstrom,et al.  A Continuously Tunable 65--15-GHz Gunn Oscillator , 1985 .

[15]  P. Shen,et al.  Efficient generation of guided millimeter-wave power by photomixing , 2002, IEEE Photonics Technology Letters.

[16]  Dieter Jäger,et al.  Ultra-wide-band traveling-wave photodetectors for photonic local oscillators , 2003 .

[17]  S. Jones,et al.  100-300 GHz Gunn oscillator simulation through harmonic balance circuit analysis linked to a hydrodynamic device simulator , 1994 .

[18]  R. Judaschke.  Comparison of modulated impurity-concentration InP transferred electron devices for power generation at frequencies above 130 GHz , 2000 .

[19]  G. Haddad,et al.  Development of an appropriate model for the design of D-band InP Gunn devices , 1993, Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

[20]  Heribert Eisele,et al.  D-band InP Gunn devices with second-harmonic power extraction up to 290 GHz , 1994 .

[21]  G. I. Haddad,et al.  High-performance InP Gunn devices for fundamental-mode operation in D-band (110-170 GHz) , 1995 .

[22]  Heribert Eisele,et al.  Second-harmonic power extraction from InP Gunn devices with more than 1 mW in 260-320 GHz frequency range , 1998 .

[23]  Ridha Kamoua.  Potential of second-harmonic power generation in InP Gunn oscillators above 200 GHz , 1998, Optics & Photonics.

[24]  G. Haddad,et al.  Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above , 2000 .

[25]  M. Adlerstein,et al.  Approximate formulas for the thermal resistance of IMPATT diodes compared with computer calculations , 1977, IEEE Transactions on Electron Devices.

[26]  A. Rydberg,et al.  High efficiency and output power from second- and third-harmonic millimeter-wave InP-TED oscillators at frequencies above 170 GHz , 1990, IEEE Electron Device Letters.