High-temperature operation of self-assembled GaInNAs∕GaAsN quantum-dot lasers grown by solid-source molecular-beam epitaxy

Self-assembled GaInNAs∕GaAsN single layer quantum-dot (QD) lasers grown using solid-source molecular-beam epitaxy have been fabricated and characterized. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is ∼1.05kA∕cm2 from a GaInNAs QD laser (50×1700μm2) at 10°C. High-temperature operation up to 65°C was also demonstrated from an unbonded GaInNAs QD laser (50×1060μm2), with high characteristic temperature of 79.4K in the temperature range of 10–60°C.

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