论文信息 - First principles calculations of Si doped fullerenes: Structural and electronic localization properties in C59Si and C58Si2 - 字舞流文

First principles calculations of Si doped fullerenes: Structural and electronic localization properties in C59Si and C58Si2

M. Parrinello | M. Boero | I. Billas | T. P. Martin | C. Massobrio | W. Branz | N. Malinowski | M. Heinebrodt | F. Tast