A 3.2-V operation single-chip AlGaAs/GaAs HBT MMIC power amplifier for GSM900/1800 dual-band applications

A 3.2-V operation single-chip HBT MMIC power amplifier has been successfully developed for GSM900/1800 applications, featuring on-chip bias circuits switched in turn between 900 MHz and 1800 MHz. The IC delivers a P/sub out/ of over 34.5 dBm and a PAE of over 50% for GSM900, a 32-dBm P/sub out/ and a 42% PAE for GSM1800 (DCS 1800).

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