论文信息 - Use of selective annealing for growing very large grain silicon on insulator films

Use of selective annealing for growing very large grain silicon on insulator films

The selective annealing technique (laser annealing under a patterned antireflecting coating) has been successfully applied to the growth of very large (20×400 μm) silicon single crystals on SiO2. The grain boundary location is controlled by a conventional lithography step, and the grains obtained have a nearly perfect rectangular shape.

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