Molecular dynamics study on Ar ion bombardment effects in amorphous SiO2 deposition processes

Argon ion bombardment effects on growing amorphous SiO2 films during reactive sputtering deposition processes were examined based on molecular dynamics (MD) and Monte Carlo (MC) simulation techniques. The system we have considered here is a film that is subject to energetic Ar bombardment while it is formed by surface reactions of Si and O atoms separately supplied at low kinetic energies. It has been found that (1) Ar injections preferentially sputter O atoms from the surface over Si and (2) also have a compressing effect on the growing film during the deposition process. In other words, our MD/MC simulations have demonstrated at the atomic level that, with higher energy Ar injections, an amorphous SiO2 film grown in a reactive sputtering deposition process is denser and more Si rich.

[1]  Jeffrey Hopwood,et al.  Metal ion deposition from ionized mangetron sputtering discharge , 1994 .

[2]  Sailing He,et al.  A metal-coated etched diffraction demultiplexer with a low polarization dependent loss , 2005 .

[3]  S. Hamaguchi,et al.  Topography Evolution of Dielectric Thin Films on Grating Surfaces in Oblique Deposition by Multiple Sources (ODMS) , 2006, IEEE Transactions on Plasma Science.

[4]  S. Hamaguchi,et al.  Liner conformality in ionized magnetron sputter metal deposition processes , 1996 .

[5]  Jianda Shao,et al.  Design and properties analysis of multi-layer dielectric used in pulse compressor gratings , 2005 .

[6]  William H. Press,et al.  Numerical recipes in C , 2002 .

[7]  Weber,et al.  Computer simulation of local order in condensed phases of silicon. , 1985, Physical review. B, Condensed matter.

[8]  Yoshihiko Hirai,et al.  Fine pattern fabrication on glass surface by imprint lithography , 2003 .

[9]  Ian M. Torrens,et al.  CHAPTER IV – EMPIRICAL INTERATOMIC POTENTIALS , 1972 .

[10]  J. Hopwood,et al.  Magnetron sputter deposition with high levels of metal ionization , 1993 .

[11]  Satoshi Hamaguchi,et al.  Simulations of trench‐filling profiles under ionized magnetron sputter metal deposition , 1995 .

[12]  Satoshi Hamaguchi,et al.  Molecular dynamics simulation of silicon and silicon dioxide etching by energetic halogen beams , 2001 .

[13]  Iwao Ohdomari,et al.  Novel Interatomic Potential Energy Function for Si, O Mixed Systems , 1999 .

[14]  S. Hamaguchi,et al.  Classical interatomic potentials for Si-O-F and Si-O-Cl systems , 2001 .

[15]  Paul Isaac Hagouel.  Blazed diffraction gratings fabricated using X-ray lithography: fabrication, modeling and simulation , 2003, Microelectron. Reliab..

[16]  N. Metropolis,et al.  Equation of State Calculations by Fast Computing Machines , 1953, Resonance.

[17]  S. Hamaguchi,et al.  Numerical Analysis of Incident Angle Effects in Reactive Sputtering Deposition of Amorphous SiO2 , 2006 .

[18]  D. J. Economou,et al.  A molecular dynamics simulation of ultrathin oxide films on silicon: Growth by thermal O atoms and sputtering by 100 eV Ar/sup +/ ions , 1999 .