论文信息 - A variability-based analysis technique revealing physical mechanisms of MOSFET low-frequency noise

A variability-based analysis technique revealing physical mechanisms of MOSFET low-frequency noise

This paper presents a technique for statistical analysis of MOSFET low-frequency noise (LFN) based on the autocorrelation coefficient of numerous LFN power spectral density (PSD) spectra. This correlation analysis reveals information about physical mechanisms behind 1/ƒ noise that is difficult to obtain otherwise. The methodology also enables quantification and validation of old and new statistical LFN models. Numerous PSD spectra from contemporary mixed-signal CMOS technologies were analysed; the results reinforce the idea that the 1/ƒ noise in MOSFETs has a trapping-related origin.

[1] Xin Li,et al. Modeling local variation of low-frequency noise in MOSFETs via sum of lognormal random variables , 2012, Proceedings of the IEEE 2012 Custom Integrated Circuits Conference.

[2] L.K.J. Vandamme,et al. What Do We Certainly Know About $\hbox{1}/f$ Noise in MOSTs? , 2008, IEEE Transactions on Electron Devices.

[3] Hans P. Tuinhout,et al. A Physics-Based Statistical RTN Model for the Low Frequency Noise in MOSFETs , 2016, IEEE Transactions on Electron Devices.

[4] Ralf Brederlow,et al. Statistical model for MOSFET low-frequency noise under cyclo-stationary conditions , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[5] Mikael Östling,et al. 1/f noise in Si and Si/sub 0.7/Ge/sub 0.3/ pMOSFETs , 2003 .

[6] L.K.J. Vandamme,et al. Experimental studies on 1/f noise , 1981 .

[7] M. J. Kirton,et al. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise , 1989 .

[8] R. Havens,et al. Noise modeling for RF CMOS circuit simulation , 2003 .

[9] Gilson I. Wirth,et al. A physics-based RTN variability model for MOSFETs , 2014, 2014 IEEE International Electron Devices Meeting.