论文信息 - Point twin-bit RRAM in 3D interweaved cross-point array by Cu BEOL process

Point twin-bit RRAM in 3D interweaved cross-point array by Cu BEOL process

A self-rectifying twin-bit RRAM in a novel 3D interweaved cross-point array has been proposed and demonstrated in 28nm CMOS BEOL process. With TaOx RRAMs on both sides of a single Via, the twin-bit RRAM cell is composed by Cu back-end layers only. Excellent selectivity by its asymmetric IV characteristic enables the twin-bit 1R cells to be efficiently stacked in 3D cross-point arrays.

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