3-D Simulation of Junction- and Doping-Free Field-Effect Transistor Under Heavy Ion Irradiation

The growing concerns of soft error rates and single-event upset (SEU) due to ion-irradiation in sub-20 nm CMOS technology based field-effect transistors are the major challenges. Therefore, in this paper, we have investigated the doping-less junctionless transistor (DL-JLT) sensitivity toward heavy ion-irradiation and compared it with the conventional junctionless transistor (JLT) of channel length 15 nm. We observed the bipolar gain and total collected charges in both devices as a function of linear energy transfer. From TCAD simulations, it was observed that the DL-JLT has exhibited the Shockley–Read–Hall recombination rate and total collected charge due to ion strike ~ 4 orders and ~ 2 orders magnitude lower than the conventional JLT at <inline-formula> <tex-math notation="LaTeX">${V_{\mathrm{ DS}} = 0.4}$ </tex-math></inline-formula> V, respectively. Similarly, bipolar gain and collected charge in DL-JLT under different circumstances are significantly (up to <inline-formula> <tex-math notation="LaTeX">${\sim 57\times }$ </tex-math></inline-formula>) lower than the conventional JLT that implies the radiation-hardened behavior of DL-JLT and less susceptibility against SEU.

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