Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry
暂无分享,去创建一个
Evelyn N. Wang | Tomás Palacios | Omair I. Saadat | Kevin R. Bagnall | E. Wang | T. Palacios | S. Joglekar | K. Bagnall | O. Saadat | Sameer Joglekar
[1] E. Kohn,et al. Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon , 2005, IEEE Transactions on Electron Devices.
[2] E. A. Burgemeister,et al. Thermal conductivity and electrical properties of 6H silicon carbide , 1979 .
[3] W. Pribble,et al. Thermal analysis and its application to high power GaN HEMT amplifiers , 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.
[4] Jean-Claude Jacquet,et al. Thermal Characterization Using Optical Methods of AlGaN/GaN HEMTs on SiC Substrate in RF Operating Conditions , 2015, IEEE Transactions on Electron Devices.
[5] H. Blanck,et al. Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs , 2016, IEEE Electron Device Letters.
[6] E. Wang,et al. Theory of Thermal Time Constants in GaN High-Electron-Mobility Transistors , 2018, IEEE Transactions on Components, Packaging and Manufacturing Technology.
[7] E. Dallago,et al. Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization. I. Fundamentals and theory , 1998 .
[8] Jianfeng Xu,et al. Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications , 2007, IEEE Microwave and Wireless Components Letters.
[9] T. Martin,et al. Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance , 2011 .
[10] J.A. del Alamo,et al. Measurement of Channel Temperature in GaN High-Electron Mobility Transistors , 2009, IEEE Transactions on Electron Devices.
[11] J. Rayne,et al. Elastic Constants of Indium from 1.4° to 300°K , 1961 .
[12] Samuel Graham,et al. Invited Article: Simultaneous mapping of temperature and stress in microdevices using micro-Raman spectroscopy. , 2007, The Review of scientific instruments.
[13] Roland B. Simon,et al. Diamond micro-Raman thermometers for accurate gate temperature measurements , 2014 .
[14] M. Kuball,et al. Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy , 2002, IEEE Electron Device Letters.
[15] Neil J Everall,et al. Confocal Raman Microscopy: Performance, Pitfalls, and Best Practice , 2009, Applied spectroscopy.
[16] V. Székely,et al. A new evaluation method of thermal transient measurement results , 1997 .
[17] T. Martin,et al. Nanosecond Time-Resolved Raman Thermography: Probing Device and Channel Temperature in Pulsed-Operated GaN and GaAs HEMTs , 2008 .
[18] F. Bertoluzza,et al. Three-dimensional finite-element thermal simulation of GaN-based HEMTs , 2009, Microelectron. Reliab..
[19] T. Beechem,et al. Single element Raman thermometry. , 2013, The Review of scientific instruments.
[20] C. Gaquière,et al. Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs , 2010 .
[21] R. C. Bradt,et al. Thermal expansion of the hexagonal (4H) polytype of SiC , 1986 .
[22] P. Parikh,et al. 40-W/mm Double Field-plated GaN HEMTs , 2006, 2006 64th Device Research Conference.
[23] M. Kuball,et al. Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy , 2007, IEEE Electron Device Letters.
[24] Yiyang Li,et al. Phonon scattering in strained transition layers for GaN heteroepitaxy , 2014 .
[25] E. Janzén,et al. Heat Capacity of 4H‐SiC Determined by Differential Scanning Calorimetry , 2000 .
[26] M. Boćkowski,et al. Linear piezoelectricity material constants for ammonothermal gallium nitride measured by bulk acoustic waves , 2015 .
[27] E. Wang,et al. Transient thermal dynamics of GaN HEMTs , 2016, 2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm).
[28] M. Asheghi,et al. Low Thermal Resistances at GaN–SiC Interfaces for HEMT Technology , 2012, IEEE Electron Device Letters.
[29] D. Sedmidubský,et al. High temperature enthalpy and heat capacity of GaN , 2003 .
[30] M. Kuball,et al. Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices , 2008, IEEE Electron Device Letters.
[31] R. Vetury,et al. Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features , 2013, IEEE Transactions on Electron Devices.
[32] M. Kuball. Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control , 2001 .
[33] D. Vanderbilt,et al. Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors , 2016 .
[34] M. Grimsditch,et al. The elastic constants of silicon carbide: A Brillouin-scattering study of 4H and 6H SiC single crystals , 1997 .
[35] Umesh K. Mishra,et al. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure , 2013, IEEE Transactions on Electron Devices.
[36] A. Shakouri,et al. High Resolution Thermal Characterization and Simulation of Power AlGaN/GaN HEMTs Using Micro-Raman Thermography and 800 Picosecond Transient Thermoreflectance Imaging , 2014, 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
[37] Jingbiao Cui,et al. Noncontact temperature measurements of diamond by Raman scattering spectroscopy , 1998 .