论文信息 - SLS technology: the FPA perspective

SLS technology: the FPA perspective

We present the performance of longwave infrared focal plane arrays (FPAs) made from Type-II InAs/GaSb strained layer superlattice (SLS) photodiodes. In 320x256 FPAs operating at 77K, we measure cutoff wavelength ~ 8.5 μm, dark current density ~ 10-5 A/cm2, quantum efficiency > 5% (with 2 μm -thick absorber photodiode), and pixel operability ~ 96%. Device physics and FPA performance are graphed. Current challenges are discussed.

[1] Martin Walther,et al. InAs/GaSb type-II short-period superlattices for advanced single and dual-color focal plane arrays , 2007, SPIE Defense + Commercial Sensing.

[2] Leroy L. Chang,et al. Optical absorption of In1−xGaxAsGaSb1−yAsy superlattices , 1978 .

[3] D. Ting,et al. A high-performance long wavelength superlattice complementary barrier infrared detector , 2009 .

[4] Marion B. Reine,et al. HgCdTe photodiodes for IR detection: a review , 2001, SPIE OPTO.

[5] Alexander Soibel,et al. Infrared imaging arrays based on superlattice photodiodes , 2008, SPIE Defense + Commercial Sensing.

[6] J. B. Rodriguez,et al. Mid-IR focal plane array based on type-II InAs /GaSb strain layer superlattice detector with nBn design , 2008 .

[7] Jeffrey H. Warner,et al. Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes , 2006 .

[8] L. Esaki,et al. A new semiconductor superlattice , 1977 .

[9] P.-Y. Delaunay,et al. Background Limited Performance of Long Wavelength Infrared Focal Plane Arrays Fabricated From M-Structure InAs–GaSb Superlattices , 2009, IEEE Journal of Quantum Electronics.

[10] B. F. Levine,et al. Quantum‐well infrared photodetectors , 1993 .