Energy gaps, charge distribution and optical properties of AlxIn1−xSb ternary alloys
暂无分享,去创建一个
[1] M. Edirisooriya,et al. Reduction of microtwin defects for high-electron-mobility InSb quantum wells , 2007 .
[2] N. Bouarissa. Pseudopotential study of bonding and ionicity in InP at various pressures , 1999 .
[3] N. Bouarissa. Electronic properties of GaxIn1−xP from pseudopotential calculations , 2010 .
[4] Marvin L. Cohen,et al. Special Points in the Brillouin Zone , 1973 .
[5] T. Ashley,et al. Mid-infrared AlxIn1−xSb light-emitting diodes , 2007 .
[6] Michael A. Littlejohn,et al. Energy bandgap and lattice constant contours of iii–v quaternary alloys , 1978 .
[7] L. Vandersypen,et al. Supporting Online Material for Coherent Control of a Single Electron Spin with Electric Fields Materials and Methods Som Text Figs. S1 and S2 References , 2022 .
[8] Richardson,et al. Electron charge densities at conduction-band edges of semiconductors. , 1986, Physical review. B, Condensed matter.
[9] C. Kim,et al. Band structure of ternary compound semiconductors beyond the virtual crystal approximation , 1990 .
[10] Y. N. Ahammed,et al. A study on the Moss relation , 1995 .
[11] Suman Datta,et al. Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications , 2007 .
[12] I. Vurgaftman,et al. High-power/low-threshold type-II interband cascade mid-IR laser-design and modeling , 1997, IEEE Photonics Technology Letters.
[13] T. Ashley,et al. Lateral n–i–p junctions formed in an InSb quantum well by bevel etching , 2005 .
[15] Determination of the concentration and temperature dependence of the fundamental energy gap in AlxIn1−xSb , 1998 .
[17] Sadao Adachi,et al. Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4‐μm optoelectronic device applications , 1987 .
[18] Sadao Adachi,et al. Properties of Group-IV, III-V and II-VI Semiconductors: Adachi/Properties of Group-IV, III-V and II-VI Semiconductors , 2005 .
[19] C. Alibert,et al. Modulation-spectroscopy study of the Ga 1 − x Al x Sb band structure , 1983 .
[20] N. Bouarissa. Band gaps and charge distribution in quasi-binary (GaSb) (InAs) crystals , 2003 .
[21] Jerry R. Meyer,et al. Band parameters for III–V compound semiconductors and their alloys , 2001 .
[22] T. Moss. A Relationship between the Refractive Index and the Infra-Red Threshold of Sensitivity for Photoconductors , 1950 .
[23] Nuggehalli M. Ravindra,et al. Energy gap refractive index relations in semiconductors An overview , 2007 .
[24] Stanley D. Smith,et al. Comparison of IR LED gas sensors with thermal source products , 1997 .
[25] N. Ravindra,et al. Variation of refractive index with energy gap in semiconductors , 1979 .
[26] L.K.J. Vandamme,et al. General relation between refractive index and energy gap in semiconductors , 1994 .
[27] N. Bouarissa. The behaviour of electron valence and conduction charge densities in InP under pressure , 2000 .
[28] V. P. Gupta,et al. Comments on the Moss Formula , 1980 .
[29] J. Chelikowsky,et al. Electronic Structure and Optical Properties of Semiconductors , 1989 .
[30] R. R. Reddy,et al. Analysis of the Moss and Ravindra relations , 1992 .
[31] N. Bouarissa. Effects of compositional disorder upon electronic and lattice properties of GaxIn1−xAs , 1998 .
[32] Marvin J. Weber,et al. Handbook of Optical Materials , 2002 .
[33] N. Bouarissa,et al. Band parameters for AlAs, InAs and their ternary mixed crystals , 2008 .
[34] N. Bouarissa,et al. Energy band gaps for the GaxIn1−xAsyP1−y alloys lattice matched to different substrates , 2006 .
[35] N. Goel,et al. Ballistic transport in InSb quantum wells at high temperature , 2004 .
[36] David J. Frank,et al. Empirical fit to band discontinuities and barrier heights in III–V alloy systems , 1992 .
[37] N. Bouarissa. Optical and vibrational properties of quasi-binary (GaSb)1−x(InAs)x crystals , 2006 .
[38] M. Al‐Assiri,et al. Electronic band structure and derived properties of AlAsxSb1−x alloys , 2013 .
[39] J. Woolley,et al. Electroreflectance Spectra of AlxIn1−xSb Alloys , 1974 .
[40] M. Edirisooriya,et al. Dislocation-filtering AlInSb buffer layers for InSb quantum wells—Analysis by high-tilt bright-field and dark-field TEM , 2010 .
[41] Yiping Zeng,et al. Transport properties in AlInSb/InAsSb heterostructures , 2013 .
[42] N. Bouarissa. Pseudopotential calculations of Cd1−xZnxTe: Energy gaps and dielectric constants , 2007 .
[43] T. Ashley,et al. Quantum well mobility and the effect of gate dielectrics in remote doped InSb/AlxIn1 − xSb heterostructures , 2010 .