Testing of Bulk Radiation Damage of n-in-p Silicon Sensors for Very High Radiation Environments

We are developing n{sup +}-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility. The bulkradiationdamage after neutron and proton irradiations is characterized with the leakage current, charge collection and full depletion voltage. The detectors should provide acceptable signal, signal-to-noise ratio exceeding 15, after the integrated luminosity of 6000 fb{sup -1}, which is twice the sLHC integrated luminosity goal.

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