Alternative developer solutions for extreme ultraviolet resist

The use of the tetrapropylammonium hydroxide (TPAH) and tetrabutylammonium hydroxide (TBAH) aqueous developer solutions is proposed as an alternative to the tetramethylammonium hydroxide (TMAH) aqueous developer solution (semiconductor industry standard). A polyhydroxystyrene-based extreme ultraviolet (EUV) resist was utilized at a film thickness of 60nm. To confirm the effectiveness of these alternative developer solutions in improving linewidth roughness (LWR) performance, patterning exposures were carried out using the small field exposure tool with annular (σouter0.7∕σinner0.3) illumination conditions. Dissolution contrast curves of EUV resist using the TMAH, TPAH, and TBAH developer solutions have shown similar dissolution characteristics which means that the use of these alternative developer solutions might have minimal effect on the resist resolution limit and sensitivity. Imaging performance analysis results have shown negligible effect on the resolution capability and sensitivity. A 20% LWR impr...

[1]  Iwao Nishiyama,et al.  An analysis of EUV-resist outgassing measurements , 2007, SPIE Advanced Lithography.

[2]  Koji Kaneyama,et al.  EUV resist based on low molecular weight PHS , 2008, SPIE Advanced Lithography.

[3]  Koji Kaneyama,et al.  Dissolution characteristics of chemically amplified extreme ultraviolet resist , 2008 .

[4]  Theodore H. Fedynyshyn,et al.  Changes in resist glass transition temperatures due to exposure , 2007, SPIE Advanced Lithography.

[5]  Mingxing Wang,et al.  Synthesis and properties of new anionic photoacid generators bound polymer resists for e-beam and EUV lithography , 2008, SPIE Advanced Lithography.

[6]  Ahmed Hassanein,et al.  Multidimensional simulation and optimization of hybrid laser and discharge plasma devices for EUV lithography , 2008, SPIE Advanced Lithography.

[7]  Koji Kaneyama,et al.  EUV resist development in Selete , 2008, SPIE Advanced Lithography.

[8]  Atsuko Yamaguchi,et al.  Spectral analysis of line-edge roughness in polyphenol EB-resists and its impact on transistor performance , 2005 .

[9]  Takao Taguchi,et al.  Selete's EUV program: progress and challenges , 2008, SPIE Advanced Lithography.

[10]  F. Cerrina,et al.  Process dependence of roughness in a positive-tone chemically amplified resist , 1998 .

[11]  T. Itani,et al.  Development of New Negative-tone Molecular Resists Based on Calixarene for EUV Lithography , 2008 .

[12]  Shinji Kobayashi,et al.  Quantitative analysis of EUV resist outgassing , 2008, SPIE Advanced Lithography.

[13]  Hiroshi Ito,et al.  Fundamentals of developer-resist interactions for line-edge roughness and critical dimension control in model 248-nm and 157-nm photoresists , 2004, SPIE Advanced Lithography.

[14]  John Arnold,et al.  The use of EUV lithography to produce demonstration devices , 2008, SPIE Advanced Lithography.