论文信息 - Characterization and modeling of Al/sub 2/O/sub 3/ MIM capacitors: temperature and electrical field effects

Characterization and modeling of Al/sub 2/O/sub 3/ MIM capacitors: temperature and electrical field effects

This paper deals with the capacitance response of metal-insulator-metal (MIM) structures with 15 nm thick Al/sub 2/O/sub 3/ as dielectric. Electrical characterizations between 100 K and 450 K have been performed to study the temperature effect on the capacitance. An original model assuming that the permanent moment of the polar molecules in the Al/sub 2/O/sub 3/ film grows linearly with temperature is exposed to explain the experimental results.

S. Cremer | S. Becu | O. Noblanc | J.-L. Autran | Delpech P

[1] S. Blonkowski,et al. Investigation and modeling of the electrical properties of metal–oxide–metal structures formed from chemical vapor deposited Ta2O5 films , 2001 .

[2] Ming-Fu Li,et al. A high performance MIM capacitor using HfO2 dielectrics , 2002, IEEE Electron Device Letters.

[3] J. McPherson,et al. Trends in the ultimate breakdown strength of high dielectric-constant materials , 2003 .

[4] Serge Blonkowski,et al. Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors , 2005, Microelectron. Reliab..

[5] K.-H. Allers,et al. Dielectric reliability and material properties of Al/sub 2/O/sub 3/ in metal insulator metal capacitors (MIMCAP) for RF bipolar technologies in comparison to SiO/sub 2/, SiN and Ta/sub 2/O/sub 5/ , 2003, 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440).

[6] Voltage and temperature dependence of capacitance of high-k HfO/sub 2/ MIM capacitors: a unified understanding and prediction , 2003, IEEE International Electron Devices Meeting 2003.