论文信息 - Fabrication of a freestanding GaN layer by direct growth on a ZnO template using hydride vapor phase epitaxy - 字舞流文

Fabrication of a freestanding GaN layer by direct growth on a ZnO template using hydride vapor phase epitaxy

T. Sekiguchi | S. Park | T. Goto | K. Fujii | T. Yao | Hyun-Jae Lee | G. Kil | M. Jung | Jiho Chang | Woong Lee | Siyoung Kim | Seunghwan Park