New Method for Evaluating the Scaling Trend of Nano-Electro-Mechanical (NEM) Nonvolatile Memory cells

Finite element analysis (FEA) simulation has been performed as a new method of evaluating the scaling trend of the nano-electro-mechanical (NEM) nonvolatile memory cell. Since FEA simulation reflects the actual memory cell structure and includes nonlinear effects, it can predict program/erase operation more accurately than analltical modeling.