Using carrier-depletion silicon modulators for optical power monitoring.

Defect-mediated subbandgap absorption is observed in ion-implanted silicon-on-oxide waveguides that experience a rapid thermal annealing at 1075°C. With this effect, general carrier-depletion silicon modulators exhibit the capability of optical power monitoring. Responsivity is measured to be 22 mA/W for a 3 mm long Mach-Zehnder modulator of 2×10(18) cm(-3) doping concentration at -7.1 V bias voltage and 5.9 mA/W for a ring modulator of 1×10(18) cm(-3) doping concentration at -10 V bias voltage. The former is used to demonstrate data detection of up to 35 Gbits/s.

[1]  David Hillerkuss,et al.  Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators. , 2012, Optics express.

[2]  M. Sorel,et al.  Defect-Enhanced Silicon-on-Insulator Waveguide Resonant Photodetector With High Sensitivity at 1.55 $\mu$m , 2010, IEEE Photonics Technology Letters.

[3]  K. Ohira,et al.  On-chip optical interconnection by using integrated III-V laser diode and photodetector with silicon waveguide. , 2010, Optics express.

[4]  Xianshu Luo,et al.  Cavity-enhanced photocurrent generation by 1.55 μm wavelengths linear absorption in a p-i-n diode embedded silicon microring resonator , 2009 .

[5]  David J. Thomson,et al.  Silicon optical modulators , 2010 .

[6]  M. Geis,et al.  Silicon waveguide infrared photodiodes with >35 GHz bandwidth and phototransistors with 50 AW-1 response. , 2009, Optics express.

[7]  A. Knights,et al.  Silicon waveguide-integrated optical power monitor with enhanced sensitivity at 1550nm , 2005 .

[8]  F. Gan,et al.  CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band , 2007, IEEE Photonics Technology Letters.

[9]  J. Michel,et al.  High-performance Ge-on-Si photodetectors , 2010 .

[10]  All-silicon photonic crystal photoconductor on silicon-on-insulator at telecom wavelength. , 2010, Optics express.

[11]  T. Baehr‐Jones,et al.  Photodetection in silicon beyond the band edge with surface states. , 2007, Optics express.

[12]  J. Doylend,et al.  Silicon photonic resonator-enhanced defect-mediated photodiode for sub-bandgap detection. , 2010, Optics express.

[13]  J. Wouters,et al.  Lateral versus interdigitated diode design for 10 Gb/s low-voltage low-loss silicon ring modulators , 2012, 2012 Optical Interconnects Conference.

[14]  A. P. Knights,et al.  Modifying functionality of variable optical attenuator to signal monitoring through defect engineering , 2010 .

[15]  Hui Chen,et al.  Two-photon absorption photocurrent in p-i-n diode embedded silicon microdisk resonators , 2010 .

[16]  Y. Liu,et al.  In-line channel power monitor based on helium ion implantation in silicon-on-insulator waveguides , 2006, IEEE Photonics Technology Letters.

[17]  F. Gan,et al.  All silicon infrared photodiodes: photo response and effects of processing temperature. , 2007, Optics express.

[18]  Masaya Notomi,et al.  All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip , 2010, 1002.3207.