论文信息 - Hot-carrier-induced latchup and trapping/detrapping phenomena

Hot-carrier-induced latchup and trapping/detrapping phenomena

Two phenomena due to hot carriers in CMOS are investigated. One is latchup induced by high drain voltage. The results show that the triggering drain voltage decreases with decreasing channel length. The other is detrapping of trapped carriers during a relax cycle subsequent to DC voltage stressing. The results show that the degradation and recovery kinetics follow similar power laws and correspond to carrier trapping and detrapping, respectively.<<ETX>>

J.J. Tzou | C.M. Wang | C.Y. Yang

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