Experimental properties of injection lasers: modal distribution of laser power

The paper reports extensive measurements and analysis in terms of physical parameters of the frequency and spatial distribution of the radiation from GaAs injection lasers operated at room temperature. Covered are most of the internal configurations found in modern structures. All cavities have similar lengths and widths, cleaved uncoated facets, and sawed sidewalls. The power ranges from threshold to full drive as set by the limit for facet damage. Qualitatively the beam and spectral widths grow almost discontinuously with current near threshold and more slowly at higher drive, with up to a thousand cavity modes sharing the power at full output. Quantitative analysis is enabled by a new model of a laser cavity with sawed sidewalls and by a new equation for the modal power distribution function, which has the form of a sum over the normal modes of the cavity. Summing gives new predictive expressions for the beam shape and for the dependence of half‐width on current, both of which are found to be obeyed by...

[1]  Hugo Weichel Reviewer An Introduction to Lasers and Masers , 1974 .

[2]  H. Sommers Experimental studies of injection lasers: spontaneous spectrum at room temperature , 1972 .

[3]  M. Ettenberg,et al.  Dependence of Threshold Current Density and Efficiency on Fabry‐Perot Cavity Parameters: Single Heterojunction (AlGa)As–GaAs Laser Diodes , 1972 .

[4]  H. Sommers,et al.  AN EFFICIENT LARGE OPTICAL CAVITY INJECTION LASER , 1970 .

[5]  C. Hwang Properties of Spontaneous and Stimulated Emission in GaAs Junction Lasers. I. Densities of States in the Active Regions , 1970 .

[6]  J. Butler,et al.  HIGH‐ORDER TRANSVERSE CAVITY MODES IN HETEROJUNCTION DIODE LASERS , 1970 .

[7]  H. Weber,et al.  Short-Time Mode Behavior of GaAs Lasers , 1970 .

[8]  H. Kressel,et al.  FABRY‐PEROT STRUCTURE AlxGa1−xAs INJECTION LASERS WITH ROOM‐TEMPERATURE THRESHOLD CURRENT DENSITIES OF 2530 A/cm2 , 1970 .

[9]  R. Gill Room-temperature close-confinement GaAs laser with overall external quantum efficiency of 40 percent , 1970 .

[10]  Charles Freed,et al.  OPTICAL HETERODYNE DETECTION AT 10.6 μm OF THE BEAT FREQUENCY BETWEEN A TUNABLE Pb0.88Sn0.12Te DIODE LASER AND A CO2 GAS LASER , 1968 .

[11]  F. Nicoll Far-field patterns of electron-beam pumped semiconductor lasers , 1968 .

[12]  H. Kressel,et al.  Catastrophic Degradation in GaAs Injection Lasers , 1967 .

[13]  W. Anderson Mode confinement and gain in junction lasers , 1965 .

[14]  J. Pankove,et al.  High-efficiency injection laser at room temperature , 1964 .

[15]  H. Statz,et al.  Spectral Output of Semiconductor Lasers , 1964 .

[16]  Frank Stern,et al.  Spontaneous and Stimulated Recombination Radiation in Semiconductors , 1964 .

[17]  J. Lankard,et al.  Spectral Characteristics of GaAs Lasers Operating in ``Fabry-Perot'' Modes , 1963 .

[18]  A. L. McWhorter Electromagnetic theory of the semi-conductor junction laser , 1963 .

[19]  Robert Karplus,et al.  A Note on Saturation in Microwave Spectroscopy , 1948 .