AUnAsSb separate absorption, charge, and multiplication avalanche photodiodes

We report Al<inf>x</inf>In<inf>1−x</inf>Asj, Sb<inf>1−y</inf>-based separate absorption, charge, and multiplication avalanche photodiodes (APDs) that operate in the short-wavelength infrared spectrum. These APDs exhibit low excess noise factor, corresponding to k = 0.01, and low dark current.

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