A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

Magnetoresistance (MR) measurements is used to extract the electron mobility on strained and unstrained thin film fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transitors (MOSFETs) with channel length down to 40nm, and in a wide temperature range from 300 down to 20K. In particular the signature of Coulomb scattering (CS) on MR mobility is carefully studied and experimentally clarified. We demonstrate that MR mobility corrected for nonstationary effects can be extracted. The mobility data thus corrected for series resistance and ballistic effects show that an additional scattering really occurs in deep-100-nm scaled MOSFETs. This mobility degradation is effective for both strained and unstrained short channel devices, over the whole gate voltage range. The temperature and inversion carrier density dependences, as well as the analysis of the strain effect on mobility reveal a strong additional CS in short channel devices. Despite this dominant mechanism, a mobility gain as high...

[1]  F. Stern,et al.  Electronic properties of two-dimensional systems , 1982 .

[2]  J. Welser,et al.  Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors , 1996 .

[3]  G. Ghibaudo,et al.  Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors , 2004 .

[4]  M. Shur,et al.  Low ballistic mobility in submicron HEMTs , 2002, IEEE Electron Device Letters.

[5]  M. Lundstrom.  Fundamentals of carrier transport , 1990 .

[6]  A. Beer,et al.  Galvanomagnetic effects in semiconductors , 1963 .

[7]  A. Abramo,et al.  Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs , 2003 .

[8]  C. G. Sodini,et al.  Charge accumulation and mobility in thin dielectric MOS transistors , 1982 .

[9]  Magnetoresistance mobility extraction on TiN∕HfO2∕SiO2 metal-oxide-semiconductor field effect transistors , 2007 .

[10]  S. Thompson,et al.  Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors , 2007 .

[11]  M. Mouis,et al.  Two-dimensional modeling of the enhanced diffusion in thin base n-p-n bipolar transistors after lateral ion implantations , 1995 .

[12]  L. Selmi,et al.  On the Apparent Mobility in Nanometric n-MOSFETs , 2007, IEEE Electron Device Letters.

[13]  D. Antoniadis,et al.  Investigating the relationship between electron mobility and velocity in deeply scaled NMOS via mechanical stress , 2001, IEEE Electron Device Letters.

[14]  O. Faynot,et al.  Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films , 2007 .

[15]  M. Mouis,et al.  Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters , 2006, IEEE Transactions on Electron Devices.

[16]  S. Takagi,et al.  On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration , 1994 .

[17]  G. Ghibaudo.  Transport in the inversion layer of a MOS transistor: use of Kubo-Greenwood formalism , 1986 .

[18]  Juan Bautista Roldán,et al.  Coulomb scattering in strained‐silicon inversion layers on Si1−xGex substrates , 1996 .

[19]  M. Fischetti,et al.  On the enhanced electron mobility in strained-silicon inversion layers , 2002 .

[20]  G. Ghibaudo,et al.  Improved split C-V method for effective mobility extraction in sub-0.1-/spl mu/m Si MOSFETs , 2004, IEEE Electron Device Letters.

[21]  S. Laux,et al.  Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability , 2001 .

[22]  John D. Cressler,et al.  A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology , 1999 .

[23]  H. Fetterman,et al.  The characterization of high electron mobility transistors using Shubnikov–de Haas oscillations and geometrical magnetoresistance measurements , 1989 .

[24]  Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxide semiconductor field effect transistors , 2008 .

[25]  L. Donetti,et al.  A theoretical interpretation of magnetoresistance mobility in silicon inversion layers , 2007 .

[26]  J. Koomen,et al.  Investigation of the MOST channel conductance in weak inversion , 1973 .

[27]  Claire Fenouillet-Beranger,et al.  Differential magnetoresistance technique for mobility extraction in ultra-short channel FDSOI transistors , 2006 .

[28]  D. Schroder.  Semiconductor Material and Device Characterization , 1990 .

[29]  Osama M. Nayfeh,et al.  Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations , 2006, IBM J. Res. Dev..

[30]  A. Bournel,et al.  Monte Carlo study of apparent mobility reduction in nano-MOSFETs , 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.