New insight on the frequency dependence of TDDB in high-k/metal gate stacks

This paper deals with the oxide breakdown (BD) under positive gate voltage in nMOS Devices. First, bulk current is shown to be more sensitive than gate current for breakdown event detection. Then, since test interruption is shown to induce possible error in TBD evaluation, a methodology with an on the fly detection of breakdown is proposed for both DC and AC stresses. Finally, a discussion on the impact of charge trapping/detrapping is opened.

[1]  Hyunjin Kim,et al.  Frequency dependent TDDB behaviors and its reliability qualification in 32nm high-k/metal gate CMOSFETs , 2011, 2011 International Reliability Physics Symposium.

[2]  T. Nigam,et al.  Impact of charge trapping on the voltage acceleration of TDDB in metal gate/high-k n-channel MOSFETs , 2010, 2010 IEEE International Reliability Physics Symposium.

[3]  C. Leroux,et al.  In Depth Analysis of VT Instabilities in HFO2 Technologies by Charge Pumping Measurements and Electrical Modeling , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

[4]  Chang Seo Park,et al.  Mechanism of Electron Trapping and Characteristics of Traps in $\hbox{HfO}_{2}$ Gate Stacks , 2007, IEEE Transactions on Device and Materials Reliability.

[5]  L. Pantisano,et al.  Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics , 2003, IEEE Electron Device Letters.

[6]  X. Duan,et al.  Hole detrapping effect on gate oxide breakdown under DC and AC stress , 2000, 2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515).