论文信息 - Feasibility study of III-V/Si hybrid MOS optical modulators consisting of n-InGaAsP/Al3O3/p-Si MOS capacitor formed by wafer bonding

Feasibility study of III-V/Si hybrid MOS optical modulators consisting of n-InGaAsP/Al3O3/p-Si MOS capacitor formed by wafer bonding

We investigate III-V/Si hybrid MOS optical modulators. Owing to the large electron-induced refractive index change in InGaAsP, the modulation efficiency can be improved by a few times by using n-InGaAsP/Al3O3/p-Si MOS structure. We fabricate n-InGaAsP/Al3O3/p-Si MOS capacitor, exhibiting well-behaved C-V characteristic, enabling high-performance optical modulators.

Mitsuru Takenaka | Jae-Hoon Han | Shinichi Takagi

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