论文信息 - Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 μm light emission - 字舞流文

Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 μm light emission

I. Buyanova | Weimin M. Chen | B. Monemar | G. Pozina | J. Cárdenas | B. Svensson | G. V. Hansson | W. Ni | K. Joelsson | C. Du