Switching times variation of power MOSFET devices after electrical stress
暂无分享,去创建一个
[1] Ivica Manic,et al. Effects of electrical stressing in power VDMOSFETs , 2005, Microelectron. Reliab..
[2] Kirtley,et al. Theory of high-field electron transport in silicon dioxide. , 1985, Physical review. B, Condensed matter.
[3] D. Arnold,et al. Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon , 1993 .
[4] Roland Habchi,et al. A faster power MOSFET device with electrical stress treatment , 2005 .
[5] Breakdown and stress-induced oxide degradation mechanisms in MOSFETs , 2002 .
[6] Jean-Pierre Charles,et al. Use of electrical stress and isochronal annealing on power MOSFETs in order to characterize the effects of 60 Co irradiation , 2000 .
[7] C. Ang,et al. Characterization of interface degradation in deep submicron MOSFETs by gate-controlled-diode measurement , 2002 .
[8] Ninoslav Stojadinovic,et al. Analysis of gamma-irradiation induced degradation mechanisms in power VDMOSFETS , 1995 .
[9] A. Stesmans,et al. Relationship between oxide density and charge trapping in SiO2 films , 1999 .
[10] Martin Pölzl,et al. Ultra-thick gate oxides: charge generation and its impact on reliability , 2001, Microelectron. Reliab..