Design of a Self-Cascoded Miller Amplifier with Superior EMI Immunity in UMC 180NM CMOS

This paper presents a complementary Miller operational amplifier architecture designed with self-cascoded devices exhibiting a superior robustness to electromagnetic interference (EMI). A prototype circuit was designed, fabricated and experimentally validated in the UMC 180nm CMOS process: the complementary self-cascoded Miller amplifier has a DC gain of 62dB, an a gain-bandwidth product equal to 220MHz. Measurements confirm that the EMI -induced offset of the complementary self-cascoded Miller amplifier is decreased by more than 50% with respect to the regular self-cascoded Miller amplifier.

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