Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories
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T. Schroeder | L. Alff | P. Komissinskiy | S. Sharath | P. Calka | C. Walczyk | T. Bertaud | J. Kurian | E. Hildebrandt
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T. Schroeder | L. Alff | P. Komissinskiy | S. Sharath | P. Calka | C. Walczyk | T. Bertaud | J. Kurian | E. Hildebrandt