Analysis of The Hole Trapping Detrapping Component of NBTI Over Extended Temperature Range

An Activated Barrier Double Well Thermionic (ABDWT) model is used to calculate hole trapping-detrapping (ΔVHT) kinetics, which, together with generation of interface (ΔVIT) and bulk (ΔVOT) traps, model the time kinetics of threshold voltage shift (ΔVT) during and after Negative Bias Temperature Instability (NBTI) stress over an extended temperature range (T: +165 to -40 °C). Transient Trap Occupancy Model (TTOM) enabled Reaction-Diffusion (RD) model is used for ΔVIT and empirical stretched exponential equations are used for ΔVOT. The overall BTI Analysis Tool (BAT) framework is used to model ultra-fast ΔVT time kinetics from Gate First (GF) High-K Metal Gate (HKMG) Fully Depleted Silicon on Insulator (FDSOI) MOSFETs and Replacement Metal Gate (RMG) HKMG SOI FinFETs (SOIFF).

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